面向X波段有源相控阵T/R组件的低成本高隔离度射频开关设计

李盼; 段创维; 朱闻柏; 杨利霞; 廖桂生

doi:10.11999/JEIT260326

面向X波段有源相控阵T/R组件的低成本高隔离度射频开关设计

doi: 10.11999/JEIT260326 cstr: 32379.14.JEIT260326

光电信息获取与防护技术全国重点实验室安徽大学合肥 230601

基金项目: 国家自然科学基金(62501001)，国家重点研发计划课题资助(2024YFB3908202)，安徽省自然科学基金(2508085QF236)，中国博士后科学基金会面上项目(2025M780492)，安徽省博士后科研资助A档(2026A1274)

详细信息

作者简介:
李盼：女，讲师，研究方向为电磁超表面及其隐身技术，邮箱　lpdcrs@163.com

段创维：男，硕士生，研究方向为时间调制阵列、相控阵隐身技术，邮箱　dcw2021@163.com

朱闻柏：男，硕士生，研究方向为频率分集阵列、相控阵隐身技术，邮箱　zwbwy1@163.com

杨利霞：男，教授，研究方向为电磁散射与逆散射、现代天线理论与设计，邮箱　19002@ahu.edu.cn

廖桂生：男，教授，研究方向为雷达信号处理，邮箱　liaogs@xidian.edu.cn

通讯作者:
廖桂生　liaogs@xidian.edu.cn

中图分类号: TN62
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出版历程
- 收稿日期: 2026-03-26
- 修回日期: 2026-09-15
- 录用日期: 2026-09-15
- 网络出版日期: 2026-09-20

Design of a Low-Cost High-Isolation RF Switch for X-Band Active Phased Array T/R Modules

National Key Laboratory of Photoelectric Information Acquisition and Protection Technology, Anhui University, Hefei 230601, China

Funds: National Natural Science Foundation of China (62501001), Supported by the Project of the National Key R&D Program of China (2024YFB3908202), Anhui Provincial Natural Science Foundation (2508085QF236), General Program of the China Postdoctoral Science Foundation (2025M780492), Anhui Postdoctoral Scientific Research Program Foundation (2026A1274)

摘要

摘要: 针对低成本PIN二极管在X波段因寄生参数、接地通孔寄生效应导致开关隔离度降低与插入损耗增加的问题，该文提出一种基于寄生参数补偿的X波段低成本高隔离度并联型射频开关电路设计方法。所提方法通过引入补偿短截线与T型结等效结构电容，分别抵消不同工作状态下的寄生电抗，解决了低成本器件的高频性能恶化问题。实测结果表明，该射频开关电路在9.5～10.4 GHz频段内回波损耗优于10 dB，隔离度高于20 dB，插入损耗低于2 dB。该设计具有结构简单、易于集成、成本较低等优势，验证了低成本二极管用于X波段高隔离度T/R组件射频开关的可行性。
- 有源相控阵 /
- T/R组件 /
- 高隔离度射频开关电路 /
- 寄生参数补偿
Abstract: Objective Radio frequency (RF) switches are key front-end components in communication and radar systems, especially in active phased array transmit/receive (T/R) modules. Positive-intrinsic-negative (PIN) diodes are widely used in high-power microwave switches because of their high power-handling capability, good linearity, and mature fabrication process. However, low-cost plastic-packaged PIN diodes exhibit significant parasitic effects at X-band frequencies. Junction capacitance, package inductance, and grounding-via inductance cause shunt branches to deviate from ideal short- or open-circuit conditions, resulting in degraded isolation and increased insertion loss. To address this problem, a low-cost high-isolation X-band single-pole double-throw (SPDT) RF switch design method based on parasitic-parameter compensation is proposed. Methods A step-wise synergistic matching strategy, termed “OFF-state prioritized determination and ON-state structural compensation”, is developed. OFF-state isolation and ON-state transmission conditions are treated separately to reduce coupling between isolation and transmission objectives. For the isolation branch, OFF-state diode parasitic parameters, a compensation stub, and grounding-via inductance are combined to form a series-resonant network. By compensating parasitic reactance, the branch satisfies the required impedance condition and suppresses signal leakage. After the compensation-stub parameters are determined, ON-state compensation is realized by introducing equivalent structural capacitance through T-junction edge effects and a stepped-impedance main line. This capacitance, together with the total equivalent inductance of the shunt branch, forms a parallel-resonant network, making the branch approach an open-circuit condition at the operating frequency. Thus, signal shunting is reduced and low-insertion-loss transmission is achieved without additional lumped compensation components. Results and Discussions The proposed switch topology is presented, and a full-wave simulation model is established (Fig. 3, Fig. 4(a)). Simulation results show that return loss is better than 20 dB, isolation is higher than 20 dB, and insertion loss remains around 0.2 dB over 8.57–9.34 GHz (Fig. 4(b)). A prototype is fabricated and measured (Fig. 5). Measurement results show that, over 9.5–10.4 GHz, return loss is better than 10 dB, insertion loss is lower than 2 dB, and isolation is higher than 20 dB (Fig. 6). Although the measured operating band shifts upward by about 1 GHz relative to initial simulation results, measured trends remain consistent with theoretical analysis. To explain this frequency shift, OFF-state junction capacitance and ON-state parasitic inductance are further analyzed. As OFF-state junction capacitance decreases from 0.24 pF to 0.195 pF, the high-isolation band shifts to higher frequencies (Fig. 7(a)). With OFF-state capacitance fixed at 0.195 pF, reducing ON-state parasitic inductance from 0.7 nH to 0.2 nH shifts the return-loss response to higher frequencies (Fig. 7(b)). After parameter correction, simulated return loss, insertion loss, and isolation agree more closely with measured results (Fig. 6). Compared with existing SPDT RF switch designs, the proposed design uses low-cost plastic-packaged PIN diodes and a simple microstrip compensation structure, requires no additional lumped compensation components, reduces dependence on the high intrinsic OFF-state impedance of PIN diodes, and achieves a good balance between cost and high-frequency switch performance (Table 1). Conclusions A low-cost high-isolation X-band SPDT RF switch based on parasitic-parameter compensation is presented. By using OFF-state series resonance and ON-state structural capacitance compensation, high isolation and low insertion loss are realized simultaneously. The fabricated switch achieves isolation higher than 20 dB and insertion loss lower than 2 dB over 9.5-10.4 GHz. The switch features a simple structure, ease of integration, and low cost, and provides a practical reference for low-cost high-isolation T/R module RF switches in active phased array systems.
- Active phased array /
- T/R modules /
- High-isolation RF switch circuit /
- Parasitic parameter compensation

HTML全文

图 1 无补偿并联型 SPDT 开关电路及 PIN 二极管等效模型

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图 2 基于不同 PIN 二极管的无补偿并联型 SPDT 开关仿真结果

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图 3 开关电路结构拓扑

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图 4 开关电路模型与仿真结果

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图 5 加工实物与测试环境

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图 6 测试与仿真结果

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图 7 寄生参数敏感性仿真结果

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表 1 本文工作与现有SPDT射频开关方案的性能对比

文献	器件与技术路线	工作频率(GHz)	插入损耗(dB)	回波损耗(dB)	隔离度(dB)	成本	高阻抗依赖
[9]	GaAs pHEMT晶体管+ 电容加载堆叠FET结构	DC–40	<3	>11	>39	高	未涉及
[10]	塑封PIN二极管+ 集总RLC补偿与匹配网络	1.02–3.36	<0.81	>20	>27	中	是
[11]	GaAs PIN二极管+ 多管串联结构	37.7–61	<1.5	>10	>24.6	高	是
[12]	CMOS晶体管+ 差分结构与泄漏抵消电容	24–40	<1.6	>10	>30	高	未涉及
本文	塑封PIN二极管+ 微带结构补偿	9.5–10.4	<2	>10	>20	低	否

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参考文献(21)

[1]	HAIDER J, KHAN W, NADEEM A, et al. Design of a compact T/R module for an all-digital S-band phased array radar system[C]. 2025 2nd International Conference on Microwave, Antennas & Circuits (ICMAC), Islamabad, Pakistan, 2025: 1–4. doi: 10.1109/ICMAC64768.2025.11003263.
[2]	SHAO Bingqian, LU Chengjian, XIANG Yinjie, et al. Comprehensive review of RF MEMS switches in satellite communications[J]. Sensors, 2024, 24(10): 3135. doi: 10.3390/s24103135.
[3]	YOU Changsheng, CAI Yunlong, LIU Yuanwei, et al. Next generation advanced transceiver technologies for 6G and beyond[J]. IEEE Journal on Selected Areas in Communications, 2025, 43(3): 582–627. doi: 10.1109/JSAC.2025.3536557.
[4]	REBEIZ G M and MULDAVIN J B. RF MEMS switches and switch circuits[J]. IEEE Microwave Magazine, 2001, 2(4): 59–71. doi: 10.1109/6668.969936.
[5]	KURMENDRA and AGARWAL S. MEMS switch realities: Addressing challenges and pioneering solutions[J]. Micromachines, 2024, 15(5): 556. doi: 10.3390/mi15050556.
[6]	TAIT R N. Progress in RF-MEMS[J]. Micromachines, 2025, 16(2): 233. doi: 10.3390/mi16020233.
[7]	LI Qiqi, LENG Yongqing, QIU Xin, et al. A 6–18 GHz high power-handling switch in GaN technology[C]. 2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), Chengdu, China, 2023: 1–3. doi: 10.1109/IMWS-AMP57814.2023.10381466.
[8]	HUANG C T, LIN Y S, HUANG C Y, et al. Design and analysis of SPDT switch and array antenna for 28 GHz 5G new radio[C]. 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024, Washington, USA, 2024: 757–759. doi: 10.1109/IMS40175.2024.10600305.
[9]	TSAO C M and HSU H T. An ultra-wideband, high power and high isolation single-pole-double-throw switch using capacitive loading approach[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2023, 70(11): 4013–4017. doi: 10.1109/TCSII.2023.3286884.
[10]	ZHOU Pinhao, SHEN Guangxu, FENG Wenjie, et al. A compact wideband SPDT switch using compensating inductors and highpass matching network[J]. IEEE Transactions on Circuits and Systems I: Regular Papers, 2025, 72(8): 3961–3970. doi: 10.1109/TCSI.2024.3479424.
[11]	HSIEH Y C, LIN G J, TSAI Z M, et al. A Q-/V-band 37.6-dBm IP_{0.1 dB} and low loss SPDT switch using three-series PIN diodes connection[J]. International Journal of Microwave and Wireless Technologies, 2025, 17(4): 731–739. doi: 10.1017/S175907872510175X.
[12]	PARK J, LEE S, and HONG S. A 24–40 GHz differential SPDT switch with an NMOS and PMOS alternating structure and leakage-canceling capacitors[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2023, 70(1): 86–90. doi: 10.1109/TCSII.2022.3205907.
[13]	FORBES T, SAUGEN J, and MAGSTADT B. Differential cancellation based RF switch enabling high isolation and minimal insertion loss in 0.0006 mm² area[C]. 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS), Waco, USA, 2022: 1–4. doi: 10.1109/WMCS55582.2022.9866179.
[14]	GHORBANI F, ZHOU Jiafeng, HUANG Yi, et al. Impedance-oriented approach for maximizing linearity in p-i-n-diode-based phase shifters[J]. IEEE Transactions on Microwave Theory and Techniques, 2025, 73(8): 4513–4522. doi: 10.1109/TMTT.2025.3547970.
[15]	LIU Mingming, JIN Ronghong, GENG Junping, et al. Low-insertion loss PIN diode switches using impedance-transformation networks[J]. Progress in Electromagnetics Research C, 2013, 34: 195–202. doi: 10.2528/PIERC12092604.
[16]	VASSILEV V, VILENSKIY A, CHOU H T, et al. A 55-105 GHz PIN diode SPDT switch[C]. 2021 International Symposium on Antennas and Propagation (ISAP), Taipei, China, 2021: 1–2. doi: 10.23919/ISAP47258.2021.9614359.
[17]	SINGH A and MANDAL M K. Parasitic compensation and hence isolation improvement of PIN diode-based switches[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, 68(1): 97–101. doi: 10.1109/TCSII.2020.3000587.
[18]	ZHANG Yi, ZHOU Yingjie, LU Xinmin, et al. X-band high isolation single pole double throw switch based on resonant concept[J]. Microwave and Optical Technology Letters, 2024, 66(6): e34221. doi: 10.1002/mop.34221.
[19]	MOON S, KWON J, LEE J, et al. X-band asymmetric GaN HEMT SPDT switch using LC resonator and quarter-wave stub for high power handling capability and high isolation[C]. 2025 20th European Microwave Integrated Circuits Conference (EuMIC), Utrecht, Netherlands, 2025: 339–342. doi: 10.23919/EuMIC65284.2025.11234504.
[20]	POZAR D M. Microwave Engineering[M]. 4th ed. Hoboken: John Wiley & Sons, 2011: 56–74, 272–277. (查阅网上资料, 未找到本条文献出版地信息, 请确认).
[21]	GUPTA K C, GARG R, BAHL I, et al. Microstrip Lines and Slotlines[M]. 2nd ed. Boston: Artech House, 1996: 189–208.