非晶丝GMI磁传感器微加工制造方法

张波; 闻小龙; 万亚东; 张超; 李建华

doi:10.11999/JEIT250338

非晶丝GMI磁传感器微加工制造方法

doi: 10.11999/JEIT250338 cstr: 32379.14.JEIT250338

1.
北京科技大学数理学院北京 100083
2.
北京市弱磁检测及应用工程技术研究中心北京 100083

基金项目: 中央高校基本科研业务费专项资金(FRF-BD-25-033)

详细信息

作者简介:
张波：男，高级工程师，研究方向为磁性材料、器件及传感信息系统

李建华：男，教授，研究方向为功能材料及MEMS设计

通讯作者:
李建华　jianhuali@ustb.edu.cn

中图分类号: TP212
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- 文章访问数: 14
- HTML全文浏览量: 7
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- 被引次数: 0
出版历程
- 收稿日期: 2025-04-29
- 修回日期: 2025-09-29
- 网络出版日期: 2025-10-11

Microfabrication Method for Amorphous Wires GMI Magnetic Sensors

1.
Department of Physics, University of Science and Technology Beijing, Beijing 100083, China
2.
Beijing Engineering Research Center of Detection and Application for Weak Magnetic Field, Beijing 100083, China

Funds: The Fundamental Research Funds for the Central Universities (FRF-BD-25-033)

摘要

摘要: 与非晶带和非晶薄膜相比，非晶丝表现出更高的巨磁阻抗效应(GMI)性能，是制作GMI磁传感器的理想材料。但受限于其柔性异构的形态，非晶丝在器件制备过程中不易实现精准定位。另外，由于非晶丝润湿性差，焊接时接触电阻难以控制，导致器件性能一致性差。该文提出一种基于非晶丝的GMI磁传感器微加工制造方法，利用玻璃通孔作为对准标记和辅助固定，将非晶丝精确定位并固定在玻璃晶圆上，通过光刻、电镀等微加工工艺制备焊盘，实现非晶丝与焊盘之间的电互连，形成非晶丝的器件级加工与制造。采用绕线机在器件表面绕制信号拾取线圈，最终完成GMI磁传感器制备。该设计避免了直接在非晶丝上绕制信号拾取线圈产生的变形和应力积累问题，提高了非晶丝GMI磁传感器的可制造性。对制备的GMI磁传感器进行测试，结果表明该传感器在−1Oe～+1Oe之间具有良好的线性度和稳定性。
- 磁传感器 /
- GMI效应 /
- 非晶丝 /
- 接触电阻 /
- 器件级制造
Abstract: Objective Compared with amorphous ribbons and thin films, amorphous wires exhibit superior Giant MagnetoImpedance (GMI) performance, making them promising materials for GMI magnetic sensors. Their flexible and heterogeneous morphology, however, complicates precise positioning during device fabrication. Additionally, the poor wettability of amorphous wires hinders control of contact resistance during soldering, often resulting in inconsistent device performance. This study proposes a microfabrication method for GMI magnetic sensors based on amorphous wires. Through-glass vias are employed as alignment markers, and auxiliary fixtures are used to accurately position and secure the wires on a glass wafer. Using photolithography and electroplating, bonding pads are fabricated to establish reliable electrical interconnections between the wires and the pads, enabling device-level processing and integration. A winding machine is then applied to wind the signal pickup coil on the device surface, completing fabrication of the GMI magnetic sensor. This approach avoids deformation and stress accumulation caused by direct coil winding on the amorphous wires, thereby improving manufacturability and ensuring stable performance of amorphous wire-based GMI magnetic sensors. Methods A glass wafer is employed as the substrate, owing to its high surface flatness and mechanical rigidity, which provide stable support for the flexible amorphous wire structure. To mitigate deformation caused by wire flexibility during winding, a microelectronics process integration scheme based on the glass wafer is implemented. A metal seed layer is first deposited by magnetron sputtering. Ultraviolet lithography and electroplating are then applied to form a high-precision array of electrical interconnection pads on the wafer surface. The ends of the amorphous wire are threaded through through-glass vias fabricated along the wafer edge by laser ablation and subsequently secured, ensuring accurate positioning over the bonding pad area while maintaining the natural straight form of the wire (Figure 4). The amorphous wire is interconnected with the pads using electroplating. Standardized devices with an amorphous wire–glass substrate–interconnection structure are obtained by wafer dicing. After the microstructure of the amorphous wire and substrate is established, a winding machine is used to wind enameled wire onto the structure to form the signal pickup coil. The number of turns and spacing are precisely controlled according to the design. The sensor structure with the wound pickup coil is mounted on a Printed Circuit Board (PCB) with bonding pads. Finally, flip-chip bonding is performed to achieve secondary interconnection between the sensor structure and the PCB, completing fabrication of the sensor device. Results and Discussions The fabricated sensor device based on microelectronics processes is shown in Figure 6(a). A 40 μm diameter enameled wire is uniformly wound on the substrate surface to form the signal pickup coil, with the number of turns and spacing precisely controlled by programmed parameters of the winding machine. As shown in the magnified view in Figure 6(b), the bonding pad areas at both ends of the amorphous wire are completely covered by a copper layer. The copper plating defines the electrical connection area of the amorphous wire, while polyimide provides reliable fixation and surface protection on the substrate. The performance of five fabricated amorphous wire GMI magnetic sensors is presented in Figure 14 and Table 1. The standard deviation of sensor output ranges from 0.0272 to 0.0163, and the sensors exhibit similar sensitivity, indicating good consistency. The output characteristic curves are shown in Figure 15. Fitting analysis shows that both the Pearson correlation coefficient and the coefficient of determination are close to 1, demonstrating excellent linearity. When a 1 MHz excitation signal is applied to the amorphous wire, the output voltage exhibits a linear relationship with the external magnetic field within the range of –1 Oe to +1 Oe, with a sensitivity of 5.7 V/Oe. The magnetic noise spectrum, measured inside a magnetic shielding barrel, is shown in Figure 16. The results indicate that the magnetic noise level of the sensor is approximately 55 pT/√Hz. Conclusions A fabrication method for amorphous wire-based GMI magnetic sensors is proposed using a glass substrate integration process. The sensor is constructed through microfabrication of a glass substrate–amorphous wire microstructure. The method is characterized by three features: (i) highly reliable interconnections between the amorphous wire and bonding pads are established by electroplating, yielding a 10 mm × 0.6 mm × 0.5 mm microstructure with fixed amorphous wires; (ii) a signal pickup coil is precisely wound on the microstructure surface with a winding machine, ensuring accurate control of coil turns and spacing; and (iii) electrical connection and circuit integration with a PCB are completed by flip-chip bonding. Compared with conventional amorphous wire GMI sensors, this approach provides two technical advantages. The microfabrication interconnection process reduces contact resistance fluctuations, addressing sensor performance dispersion. In addition, the combination of conventional winding and microelectronics techniques ensures device consistency while avoiding the high cost of full-process microfabrication. This method improves process compatibility and manufacturing repeatability, offering a practical route for engineering applications of GMI magnetic sensors.
- Magnetic sensor /
- Giant MagnetoImpedance (GMI) effect /
- Amorphous wire /
- Contact resistance /
- Device-level fabrication

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图 1 钴基非晶丝的扫描电子显微镜图像

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图 2 非晶丝非晶丝与衬底组成的微型结构示意图

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图 3 非晶丝GMI传感器结构模型示意图

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图 4 实现非晶丝在玻璃晶圆上的精确定位和固定

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图 5 玻璃衬底非晶丝电互连制备工艺

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图 6 非晶丝与衬底组合结构实物照片

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图 7 非晶丝通过倒装焊接与 PCB 电连接

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图 8 对非晶丝施加频率为1 MHz的激励信号时信号拾取线圈的输出波形

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图 9 非晶丝磁传感器的信号拾取线圈在不同频率下产生信号的幅值

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图 10 非晶丝GMI弱磁传感器信号处理电路原理图

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图 11 非晶丝传感器及驱动电路

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图 12 非晶丝磁传感器电路结构图

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图 13 5个传感器输出的平均值和标准差

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图 14 非晶丝磁传感器在-1 Oe至+1 Oe磁场范围内的输出特性曲线

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图 15 在坡莫合金磁屏蔽桶中测量的非晶丝磁传感器的磁场噪声频谱

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表 1 5个传感器在相同磁场条件下的输出电压值

磁场(Oe)	传感器1 输出(V)	传感器2 输出(V)	传感器3 输出(V)	传感器4 输出(V)	传感器5 输出(V)
0.120	0.0299	0.0819	0.0416	0.0715	0.0897
0.096	–0.1066	–0.0559	–0.0962	–0.0728	–0.0468
0.072	–0.2431	–0.1937	–0.2353	–0.2002	–0.1833
0.048	–0.3796	–0.3302	–0.3705	–0.3484	–0.3211
0.024	–0.5174	–0.46811	–0.5083	–0.4888	–0.4576
0	–0.6539	–0.6058	–0.6461	–0.6175	–0.5954
–0.024	–0.7917	–0.7423	–0.7826	–0.7553	–0.7319
–0.048	–0.9295	–0.8788	–0.9191	–0.8944	–0.8697
–0.072	–1.0673	–1.0153	–1.0556	–1.0374	–1.0075
–0.096	–1.2051	–1.1531	–1.1934	–1.1596	–1.1466
–0.120	–1.3429	–1.2909	–1.3312	–1.3026	–1.2831

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