Design and Realization of a High Precision Low Temperature Coefficient Bandgap Voltage Reference

Razavi B. Design of Analog CMOS Integrated Circuits. FirstEdition, Boston: McGraw-Hill, 2001: 381-390.[2]Tsivides Y P. Accurate analysis of temperature effects inIc-VBE characteristics with application to bandgap referencesources[J].IEEE Journal of Solid-State Circuits.1980, 15(6):1076-1084[3]徐勇, 王志功, 关宇等. 一种高精度带隙电压基准源改进设计.半导体学报, 2006, 27(12): 2209-2213.Xu Yong, Wang Zhi-gong, and Guan Yu, et al.. Improveddesign of a bandgap voltage reference with high accuracy.Chinese Journal of Semiconductors, 2006, 27(12): 2209-2213.[4]李彪, 雷天民. 一种低温漂BiCMOS 带隙基准电压源的设计.电子器件, 2007, 30(1): 112-115.Li Biao and Lei Tian-min. Design of a BiCMOS bandgapvoltage reference with low drift temperature. Chinese Journalof Electron Devices, 2007, 30(1): 112-115.[5]Leung K N, MoK P K T, and Leung C Y. A 2-V 23A 5.3-ppm/℃ curvature-compensated CMOS bandgap reference.IEEE Journal of Solid-State Circuits, 2003, 38(3): 561-564.[6]Malcovati P, Maloberti F, and Fiocchi C, et al..Curvature-compensated BiCMOS bandgap with 1-V supplyvoltage[J].IEEE Journal of Solid-State Circuits.2001, 36(7):1076-1081[7]郑儒富, 俞永康. 一种4ppm/℃曲率补偿CMOS 带隙基准源.微电子学, 2007, 37(1): 101-104.Zheng Ru-fu and Yu Yong-kang. A curvature compensatedCMOS bandgap reference with 4 ppm/℃. Microelectronics,2007, 37(1): 101-104.[8]Lee I, Kim G, and Kim W, et al.. Exponentialcurvature-compensated BiCMOS bandgap references[J].IEEEJournal of Solid-State Circuits.1994, 29(11):1396-1403[9]Meijer G M, Schmale P C, and Zalinge K Y. A newcurvature-corrected bandgap reference[J].IEEE Journal ofSolid-State Circuits.1982, 17(6):1139-1143