Research Status and Prospects of Mid-Wave Infrared Superlattice Detection Technology

LIU Ming; ZHAO Yaqi; GUAN Xiaoning; ZHANG Fan; LU Pengfei

doi:10.11999/JEIT260083

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LIU Ming, ZHAO Yaqi, GUAN Xiaoning, ZHANG Fan, LU Pengfei. Research Status and Prospects of Mid-Wave Infrared Superlattice Detection Technology[J]. Journal of Electronics & Information Technology. doi: 10.11999/JEIT260083

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LIU Ming, ZHAO Yaqi, GUAN Xiaoning, ZHANG Fan, LU Pengfei. Research Status and Prospects of Mid-Wave Infrared Superlattice Detection Technology[J]. Journal of Electronics & Information Technology. doi: 10.11999/JEIT260083

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Research Status and Prospects of Mid-Wave Infrared Superlattice Detection Technology

doi: 10.11999/JEIT260083 cstr: 32379.14.JEIT260083

LIU Ming^{1, 2},
ZHAO Yaqi¹,
GUAN Xiaoning¹,
ZHANG Fan^{1, 3},
LU Pengfei^{1
,
,}

1.
School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing 100876, China
2.
The 11th Research Institute of China Electronics Technology Group Corporation, Beijing 100015, China
3.
Ningbo Weiyuan Optoelectronic Research Institute Co., Ltd., Ningbo 315200, China

Funds: National Key Laboratory of Infrared Detection Technologies (IRDT-25-01)

Accepted Date: 2026-04-09
Rev Recd Date: 2026-04-09

Available Online: 2026-05-03

Abstract

Abstract

Significance Mid-wave infrared (MWIR) detectors are crucial for both civilian and military applications due to their high sensitivity and superior temperature discrimination. Type-II superlattice (T2SL), particularly InAs/GaSb and InAs/InAsSb material systems, have emerged as the most promising candidates for third-generation infrared photodetectors. This review systematically analyzes the current research status and future trends of MWIR T2SL detection technology, focusing on key performance parameters such as quantum efficiency, dark current density, and specific detectivity. The work aims to provide a comprehensive reference for material selection and performance optimization in this rapidly advancing field. Progress Significant progress has been achieved in suppressing dark current and enhancing photoresponse for MWIR T2SL detectors. In terms of dark current suppression, advanced barrier structures like nBn, XBn, and M-structures, designed via bandgap engineering, effectively block majority carrier transport while allowing efficient collection of photogenerated carriers. For instance, an nBn device utilizing an AlAsSb/InAsSb superlattice barrier demonstrated a dark current density of 2.01×10^-5 A/cm² at 150 K (Fig. 1a, b). Strain compensation techniques and optimized growth have further reduced bulk dark currents, with one device achieving 4.5×10^-7 A/cm² at 140 K (Fig. 2c, d). Device fabrication process optimization, including two-step etching and planar junction formation via Zn diffusion, have successfully minimized surface leakage currents (Fig. 3). For photoresponse enhancement, strategies include integrating micro-optical structures and optimizing epitaxial growth and device fabrication process optimization. The integration of metalenses has boosted peak responsivity to 9.01 A/W at 300 K (Fig. 4a). Guided-mode resonance architectures have enabled room-temperature external quantum efficiency of ～60% (Fig. 4b, c). Epitaxial optimizations, such as stepped absorbers and interfacial graded doping, have led to quantum efficiencies up to 59.4% at 150 K (Fig. 5c, d). Device fabrication process optimization like substrate removal and anti-reflection coating deposition have significantly improved quantum efficiency, with an average of 63.7% reported in the 3.7–4.8 μm range (Fig.6c,d). A comparative analysis shows that InAs/GaSb detectors primarily operate near 77 K, while InAs/InAsSb detectors demonstrate superior performance at higher temperatures, around 150 K (Fig. 7, Fig. 8). Overall, dark current densities are typically suppressed below 10^-4 A/cm², with peak quantum efficiencies approaching 80%. Conclusions T2SL materials, with their tunable band structure and low Auger recombination rates, are established as the core choice for high-performance MWIR detection. Current research has successfully addressed key challenges, dark current densities have been suppressed to the 10^–6 A/cm² level at ～150 K through innovative barrier designs and device fabrication process optimization, while quantum efficiencies have been enhanced to ～60% and beyond through optical and epitaxial engineering. The InAs/InAsSb material shows particular promise for high-operating-temperature applications. Prospects Future development will focus on several key directions: 1) Pushing the high-operating-temperature (HOT) limit further to maintain diffusion-limited performance at 180 K and above; 2) Advancing large-format focal plane array fabrication based on highly uniform material growth via mature molecular beam epitaxy to achieve >99% pixel operability; 3) Expanding into multi-color/multi-spectral detection capabilities by precisely tuning superlattice periods to enable integrated dual-band or multiband MWIR detection with reduced cross-talk; 4) Exploring novel device architectures and coupling multiple physical mechanisms to extend performance boundaries and application scopes.
- Type-II Superlattice,
- Mid-Wave Infrared (MWIR),
- InAs/GaSb,
- InAs/InAsSb

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References(47)

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